Pulsed 193 nm excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

  • A.P. Menduiña, A.F. Doval, R. Delmdahl, E. Martín, K. Kant, J.L. Alonso-Gómez, S. Chiussi
  • Materials Science in Semiconductor Processing, 168, No 107839
  • DOI: 10.1016/j.mssp.2023.107839